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| SEMICONDUCTOR TECHNICAL DATA General Description It's mainly suitable for use as a load switch in battery powered applications. KMA2D4P20S P-Ch Trench MOSFET FEATURES VDSS=-20V, ID=-2.4A. Drain-Source ON Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. A 2 E B 3 : RDS(ON)=175m (Max.) @ VGS=-2.5V. 1 DIM MILLIMETERS _ A 2.926 + 0.05 _ B 1.626 + 0.05 1.25 MAX C _ D 0.40 + 0.05 _ E 2.80 + 0.15 _ G 1.90 + 0.10 _ H 0.95 + 0.05 _ J 0.15 + 0.05 0.00 ~ 0.10 K _ M 0.45 + 0.08 _ N 1.10 + 0.05 G C N H M MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC ) SYMBOL VDSS VGSS ID * IDP* IS * PD * Tj Tstg RthJA * RATING -20 12 -2.4 -9 -0.9 1.0 0.6 150 -55 150 125 /W UNIT V V A A W K SOT-23 Pulsed (Note1) Source-Drain Diode Current Drain Power Dissipation Ta=25 Ta=100 PIN CONNECTION Top View D 3 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 1 FR4 Board, t 5sec. 2 J D 1 G S 2006. 4. 6 Revision No : 0 1/5 KMA2D4P20S ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance ON State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage Dynamic (Note 2) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Note 1) Pulse test : Pulse width 300 Qg Qgs Qgd td(on) tr td(off) tf , Duty Cycle 2%. VDS=-15V, RL=5.6 , VGS=-4.5V, RG=6 (Fig.2) VDS=-15V, RD=5.6 VGS=-4.5V (Fig.1) 4 0.6 1.4 6.5 13 15 20 ns nC BVDSS IDSS Vth IGSS RDS(ON) ID(ON) gfs VSD ID=-250 A, VGS=0V, VGS=0V, VDS=-20V VGS=0V, VDS=-16V, Tj=70 VDS=VGS, ID=-250 A VGS= 12V, VDS=0V (Note 1) (Note 1) (Note 1) (Note 1) (Note 1) -20 -0.6 -9 88 146 4 -1 -5 100 100 175 -1.3 V A V nA m A S V ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL VGS=-4.5V, ID=-2.4A VGS=-2.5V, ID=-1.8A VGS=-4.5V, VDS=-5V VDS=-5V, ID=-2.4A IS=-2.4A, VGS=0V Note 2) Guaranteed by design. Not subject to production testing. 2006. 4. 6 Revision No : 0 2/5 KMA2D4P20S ID - VDS -9 -8 -4V -4.5V -5V -2.5V -3.5V -9 -3V -8 VD = VG ID - VGS -7 -6 -5 -4 -3 -2 -1 Drain Current ID (A) Drain Current ID (A) -7 -6 -5 -4 -3 -2 -1 Tj=25 C Tj= -55 C Tj=125 C -2V VGS = -1.5V 0 0 -1 -2 -3 0 0 -1 -2 -3 -4 -5 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Vth - Tj Normalized Threshold Voltage Vth 0.4 300 RDS(ON) - ID On - Resistance RDS(ON) (m) Ta=25 C ID= -250A 0.3 0.2 0.1 0 -0.1 -0.2 -75 250 200 150 100 VGS = -4.5V VGS = -2.5V 50 0 -50 -25 0 25 50 75 100 125 150 0 -2 -4 -6 -8 Junction Temperature Tj ( C) Drain Current ID (A) IS - VSD -100 RDS(ON) - Tj 1.6 VGS = -4.5V IDS =-2.7A Reverse Drain Current IS (A) Normalized On Resistance Tj=150 C 1.4 1.2 1.0 0.8 0.6 -10 Tj=25 C -1 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -75 -50 -25 0 25 50 75 100 125 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2006. 4. 6 Revision No : 0 3/5 KMA2D4P20S C - VDS 750 600 -5 Qg - VGS Gate - Source Voltage VGS (V) Frequency = 1MHz VD = -15V ID = -2.7A -4 Capacitance (pF) 450 300 150 Crss -3 Ciss -2 Coss -1 0 0 0 1 2 3 4 5 0 -5 -10 -15 -20 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Rth Normalized Transient Thermal Resistance 101 1 10-1 0.5 0.2 0.1 PDM t1 t2 Single Pluse 10-2 0.02 0.01 10-3 10-4 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-1 1 101 102 103 10-3 10-2 Square Wave Pulse Duration (sec) 2006. 4. 6 Revision No : 0 4/5 KMA2D4P20S Fig. 1 Gate Charge VGS -4.5 V Schottky Diode ID 0.5 VDSS 1.0 mA ID VDS VGS Q Qgs Qgd Qg Fig. 2 Resistive Load Switching RL td(on) ton tr td(off) toff tf 0.5 VDSS 6 VDS VGS 10% -4.5 V VGS VDS 90% 2006. 4. 6 Revision No : 0 5/5 |
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